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Ultra shallow junction


 

Research topics

Analytical methodology development for dopant distribution determination in semiconductor materials. The work is focused on ultra
shallow junction in order to determine dopant diffusion mechanisms and their distribution towards the surface.

Main feature

  • Ultra Low Energy Ion Implantation (<3 keV)
  • Plasma immersion ion implantation
  • Heat treatments with low thermal budget (RTA, LTA, Flash…)
  • Multi-technique characterizations

Main Challenges

  • Complementary analytical technique
  • Ultimate analytical requirements
  • State of the art and future matter and technology

Objective

  • Development of advanced surface analytical techniques
  • Collaboration with industrial partners to give state-of-art answer on technological problems
  • Understand underlying surface phenomena

Partnership